SEMICONDUCTOR INFRARED SOURCE (VERSIONS) Russian patent published in 2012 - IPC H01S5/65 H01S5/10 H01L27/08 

FIELD: physics.

SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.

EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.

2 cl, 14 dwg