METHOD FOR ENHANCING RADIATION STABILITY OF SEMICONDUCTOR DEVICES Russian patent published in 2007 - IPC H01L21/263 

FIELD: semiconductor device manufacture.

SUBSTANCE: upon formation of epitaxial film and silicon dioxide insulating layer on semiconductor substrate surface semiconductor structures are subjected to γ-quanta treatment at dose rate ranging between 10⁵ and 10⁶ radians and temperature ranging between 350 and 450 °C. Such treatment provides for reducing leakage currents, enhancing mobility of carriers within semiconductor devices, facilitating their manufacture, and improving their parameters.

EFFECT: enhanced reliability and yield.

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