FIELD: electricity.
SUBSTANCE: in a method for semiconductor device fabrication, a buried insulating layer is formed of silicon nitride by N2 implantation in a silicon substrate at temperature 550-650°C, power 140-160 keV and dose 7.5·1017 cm-2, to be thereafter annealed at temperature 1200°C in an argon atmosphere for 2-4 hours.
EFFECT: reduced defect density in the semiconductor devices to provide manufacturability, to improve parameters, to increase reliability and percentage yield.
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