METHOD FOR MANUFACTURING OF SHALLOW JUNCTIONS Russian patent published in 2021 - IPC H01L21/265 H01L21/324 

FIELD: semiconductors.

SUBSTANCE: invention relates to the field of technology of the production of semiconductor devices. The method for forming the active areas of field-effect transistors involves forming the active areas of a field-effect transistor on a n-type silicon substrate with a resistivity of 4.5 Ohms*cm. A layer of titanium Ti with a thickness of 110 nm is applied to the substrate and heat-treated at a temperature of 950ºC for 70 s in an atmosphere of nitrogen N₂, then a membrane of pyrolytic oxide with a thickness of 150 nm is grown and boron ion implantation is performed with an energy of 50 keV, a dose of 7.5*10¹⁵ cm^-2 followed by heat treatment at a temperature of 900ºC for 20s in an atmosphere of nitrogen N₂.

EFFECT: invention provides a reduction in leakage currents, manufacturability, improvement of device parameters, improvement of quality and an increase in the percentage of usable output.

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