METHOD FOR MANUFACTURING DIELECTRIC INSULATION Russian patent published in 2018 - IPC H01L21/76 

FIELD: electricity.

SUBSTANCE: invention relates to semiconductor manufacturing technology, in particular to technology of manufacturing dielectric isolation with low leakage currents. Method comprises the following: a groove is etched out on the silicon substrate, then an insulating film, consisting of successively applied layers of thermal oxide and silicon nitride Si₃N₄, is formed on the substrate, and the composite layer is alloyed with oxygen ions with an energy of 50 keV, a dose of 1*10¹⁶ cm^-2, followed by thermal annealing at a temperature of 970°C for 1 hour under a nitrogen atmosphere.

EFFECT: technical result of the invention is lower leakage currents, improved parameters, higher quality and percentage yield of non-defective devices.

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