MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Russian patent published in 2017 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: in the manufacturing method of semiconductor structure, a p-type silicon wafer with orientation (100) is oxidized in an atmosphere of dry oxygen, then phosphorus ions are implanted with an energy of 100-115 keV, a dose of 1*10¹⁵ cm^-2, followed by annealing at 1150°C under a nitrogen atmosphere with formation in the substrate of the n⁺-type conductivity region with a surface impurity concentration of 1*10¹⁹ cm^-3. Then a polysilicon layer is deposited on the surface of the plate and the plate is scanned with an Ar-laser beam with a power of 5-10 W at a speed of 90-100 cm/s in a direction perpendicular to the seed path, resulting in local melting of the polysilicon followed by crystallization of the epitaxial layer. After the epitaxy process, the protective SiO₂ layer is removed and a field-effect transistor is formed using standard technology.

EFFECT: reduced flaw density, improved fabricability, instrument parameters and quality, increased percentage yield of serviceable devices.

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