METHOD FOR PRODUCTION OF TITANIUM SILICIDE Russian patent published in 2021 - IPC H01L21/283 

FIELD: semiconductors.

SUBSTANCE: invention relates to the field of technology for manufacturing semiconductor apparatuses, particularly to a technology for manufacturing titanium silicide with a reduced contact resistance value. The method for manufacturing semiconductor apparatuses includes the processes of forming active areas of a field-effect transistor and electrodes therefor, a gate insulator and titanium silicide, wherein, according to the invention, titanium silicide is formed on p-type silicon substrates with orientation (100), with a resistivity of 10 Ohm∙cm, by depositing a titanium Ti film with a thickness of 75 nm at a pressure of 3∙10^-6 Pa, a substrate temperature of 60°C, a growth rate of 1 nm/s and followed by treatment of the structures with Si ions with an energy of 85 keV at a dose of 1∙10¹⁵-1∙10¹⁶ cm^-2, with low-temperature annealing at a temperature of 650°C for 30 s in an atmosphere of nitrogen N₂ and executing high-temperature annealing at a temperature of 1050°C for 20 s in an atmosphere of nitrogen N₂.

EFFECT: invention provides reduced contact resistance, increased manufacturability, improved parameters of the equipment, increased quality and increased yield ratio.

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