METHOD OF STABILISING NANO- AND MICRO-ELECTROMECHANICAL SYSTEM OF FINE-FILM TENSORESISTOR PRESSURE SENSOR Russian patent published in 2011 - IPC G01L7/00 B81C1/00 B82B1/00 

FIELD: physics.

SUBSTANCE: in the disclosed method of stabilising nano- and micro-electromechanical system of a thin-film tensoresistor pressure sensor, the tensoresistors are heated with pulsed electric current after sealing the inner cavity of the detecting element of the sensor while simultaneously applying onto its receiving cavity the maximum allowable measured pressure and the minimum allowable operating temperature, as well as the maximum allowable measured pressure and the maximum allowable operating temperature. Thermal stabilisation is carried out at temperature which is 1.05 times higher than the maximum allowable operating temperature. The initial output signals during stabilisation are measured at high supply voltage. The rate of change of the initial output signal is controlled based on the ratio of the rate of change of the adjusted values of the initial output signals during the last and the second last measurement of the initial output signal during thermal stabilisation, respectively.

EFFECT: high stability of the initial and nominal output signal of thin-film tensoresistor pressure sensors and detecting hidden defects of tensoresistors at different manufacturing stages.