NITROGEN DIOXIDE SENSOR Russian patent published in 2021 - IPC G01N27/12 

Abstract RU 2745943 C1

FIELD: gas analysis.

SUBSTANCE: invention relates to the field of gas analysis, in particular to detecting devices used for recording and measuring the content of nitrogen dioxide trace impurities. The invention can be used in ecology. A semiconductor nitrogen dioxide sensor is proposed, consisting of a semiconductor base made in the form of a polycrystalline solid solution film of the composition (InAs)0.84(ZnS)0.16, which is deposited on a non-conductive substrate.

EFFECT: sensor according to the invention makes it possible, with a significant simplification of its manufacturing technology, to determine the content of nitrogen dioxide with sensitivity several times higher than the sensitivity of known sensors.

1 cl, 1 tbl, 2 dwg

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RU 2 745 943 C1

Authors

Kirovskaya Iraida Alekseevna

Umanskiy Ilia Yurievich

Ekkert Alisa Olegovna

Ekkert Robert Vladimirovich

Bukashkina Tatiana Leonidovna

Dates

2021-04-05Published

2020-08-20Filed