SEMICONDUCTOR NITROGEN DIOXIDE SENSOR Russian patent published in 2019 - IPC G01N27/12 

Abstract RU 2697920 C1

FIELD: gas analysis.

SUBSTANCE: invention relates to gas analysis and can be used for environmental monitoring tasks. Disclosed is a semiconductor sensor of nitrogen dioxide, consisting of a semiconductor base made in form of a polycrystalline film of zinc selenide (ZnSe), which is deposited on a non-conductive substrate.

EFFECT: sensor according to the invention with considerable simplification of its manufacturing technology enables to determine content of nitrogen dioxide with sensitivity several times higher than that of known sensors.

1 cl, 2 dwg

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RU 2 697 920 C1

Authors

Kirovskaya Iraida Alekseevna

Ekkert Alisa Olegovna

Ekkert Robert Vladimirovich

Dates

2019-08-21Published

2019-03-21Filed