METHOD OF MAKING PHOTOELECTRIC CONVERTER CHIPS Russian patent published in 2010 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making photoelectric converter chips involves depositing a solid metal ohmic contact on the rear surface of a structure and a local metal ohmic contact on the front surface of a multilayer semiconductor plate with n-Ge structure of the substrate, p-Al_0.5GaAs and p-Al_0.8GaAs emitter, p⁺-GaAs contact layer, division of the structure into chips, passivation of the lateral surface of the chips with a dielectric, removal of part of the front contact layer of the structure and depositing an antireflection coating on the photosentive area of the front surface of the structure. The structure is divided into chips through a photoresist mask on the side of the front surface of the structure at a depth of 15-50 mcm through electrochemical etching in one technological process using one electrolyte for etching the semiconductor structure and the germanium substrate.

EFFECT: improved parametres of the photoelectric converter due to making a level vertical wall of the dividing mesa by etching the structure and the germanium substrate in one process cycle using one electrolyte based on a solution of glycerine and alkali, and subsequent passivation of the lateral surface of the chips.

7 dwg, 10 ex