METHOD OF MAKING PHOTODETECTOR ARRAY Russian patent published in 2016 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: in the method of making a photodetector array, a channel with a defined depth is etched on the front side of a photosensitive element before hybridisation. During thinning, when polishing reaches the bottom of the channel, owing to the given width of the depression, there is a sharp change in the size of the base region which can be detected visually. At that instant, thinning is stopped - the obtained crystal has even edges and a fixed size defined by photographic masks under the depression. In order to make a depression after etching indium microcontacts, a thin SiO film is sprayed without removing the lower protective and the upper photoresist. Further, photolithography is performed on SiO using a rectangular photographic mask which opens the place under the depression. Further, the method includes plasma-chemical etching of SiO at the site of the depression and wet chemical etching of the depression directly by the required depth. The photoresist is removed, the remaining SiO film is plasma-chemically etched away and the photoresist remains are removed.

EFFECT: thinning the base region of a photosensitive element to obtain the required quality and reproducibility of boundaries and thickness.

4 cl, 12 dwg