FIELD: power industry.
SUBSTANCE: method for producing chips of concentrator solar photocells involves growing of photosensitive multi-layer semiconductor structure on germanium substrate, in-series application to surface of photosensitive multi-layer structure of passivation layer and contact layer, local removal of contact layer for opening the part of below lying passivation layer and formation of strips of contact layer. Then, multi-layer antireflection coating is created on open part of passivation layer and ohmic contacts are formed on surface of strips of contact layer and on rear surface of photosensitive multi-layer semiconductor structure. Further thickening of the base of ohmic contacts by electrochemical deposition of layer of contact material, separation of multi-layer structure into chips and passivation of side surface of chips with dielectric is performed. Thickening of the base of ohmic contacts on surface of strips of contact layer is performed through the mask made by means of ammonical overturning of positive photoresist. Strips of mask in cross section have the shape of trapezoid the smaller base of which adjoins the front surface of photosensitive multi-layer semiconductor structure. Side surfaces of the obtained strips of ohmic contacts are mirror-like.
EFFECT: method allows producing chips of concentrator solar photocells with low shadowing degree of photosensitive surface of solar photocells, with low ohmic resistance of strips of ohmic contacts.
4 cl, 7 dwg, 10 ex
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Authors
Dates
2011-12-10—Published
2010-08-31—Filed