SYSTEMS AND METHODS TO DISTRIBUTE GAS IN REACTOR FOR CHEMICAL DEPOSITION FROM STEAM PHASE Russian patent published in 2013 - IPC C23C16/22 C23C16/44 C01B33/27 

FIELD: machine building.

SUBSTANCE: reactor for chemical deposition of polycrystalline silicon includes a reaction chamber, comprising a support board fixed in the reaction chamber, and a jacket connected to the support board for formation of the deposition chamber, a filament element attached to the support board, a source of electric current for supply of current to the filament element, a source of silicon-containing gas connected with the reaction chamber to create the flow of silicon-containing gas via the reaction chamber and the vertical pipe, connected to the source of silicon-containing gas, for introduction of the flow of silicon-containing gas into the reaction chamber. The vertical pipe is made as capable of receiving deposits of polycrystalline silicon in the reaction chamber.

EFFECT: improved flow of gas in all volume of a reaction chamber, which makes it possible to increase yield of polycrystalline silicon, improved quality of polycrystalline silicon and reduced energy consumption.

22 cl, 4 dwg