FIELD: physics.
SUBSTANCE: invention relates to a solid-state imaging device. The solid-state imaging device has a first photoelectric conversion part, a floating diffusion unit, a first transfer transistor for transferring an electron generated in the first photoelectric conversion part to the floating diffusion unit, an amplifier transistor for outputting a signal based on value of the charge of the floating diffusion unit, a voltage controlled unit and a voltage control part for controlling voltage of the voltage controlled unit. The amplifier transistor is configured to output a first signal in a first state, wherein voltage of the floating diffusion unit is reset, as well as for outputting a second signal in a second state, wherein an electron is transferred to the floating diffusion unit, and the voltage controlled unit is connected to the floating diffusion unit through a coupling capacitance; the voltage control part is configured to control voltage of the voltage controlled unit such that voltage of the voltage controlled unit is a first voltage when the amplifier transistor outputs a first signal, voltage of the voltage controlled unit is a second voltage during at least part of a period in which the first transfer transistor is in conducting state, and voltage of the voltage controlled unit is a third voltage when the amplifier transistor outputs a second signal, and in which the second voltage is higher than each of the first and second voltages.
EFFECT: invention provides good linearity of the output signal, improved efficiency of transferring charge from the photoelectric conversion part to the floating diffusion region.
32 cl, 10 dwg
