FIELD: power engineering.
SUBSTANCE: germanium substrate for development of cascade solar elements from semiconductor compounds A3B5 and A2B6 is proposed to be made in the form of a thin film from mutually parallel single-crystal strips of rectangular shape, in which the uncovered sections of the substrate occupy not more than 5% of the total area of the film and width of clear spaces does not exceed 5 mcm. The film is formed by depositing germanium onto the substrate and subsequent recrystallisation.
EFFECT: reduced cost of a substrate and making it possible to arrange required cascade semiconductor structures of solar elements with high structural performance by means of multi-layer epitaxy.
5 cl, 3 dwg
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