METHOD OF PRODUCING SILICON DIOXIDE-BASED THIN NANOSTRUCTURED SINGLE-LAYER COATINGS VIA SOL GEL METHOD IN PRESENCE OF INORGANIC ACIDS AND SALTS THEREOF Russian patent published in 2012 - IPC C03C17/30 B82B1/00 

Abstract RU 2450984 C1

FIELD: chemistry.

SUBSTANCE: method of producing silicon dioxide-based thin nanostructured single-layer coatings involves a silicon tretraalkoxide sol gel process in the presence of an additive of hydrochloric acid and yttrium chloride, in the presence of which, after heating, a transparent silicon dioxide-based film having an antireflection effect is formed. A film-forming solution is prepared with the following ratio of components, wt %: tetraethoxysilane 4.37-5.81, yttrium chloride crystalline hydrate 6.65-8.67, hydrochloric acid - 0.01, 96 wt % ethyl alcohol being the balance. After maturation, the film-forming solution is deposited onto a glass substrate and subjected to thermal treatment in steps. The sample is heated in an air atmosphere at 500-700°C for one hour.

EFFECT: shorter time for obtaining an antireflection nanoporous coating.

3 ex

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RU 2 450 984 C1

Authors

Borilo Ljudmila Pavlovna

Spivakova Larisa Nikolaevna

Ivanova Ekaterina Sergeevna

Dates

2012-05-20Published

2010-11-25Filed