SEMICONDUCTOR STRUCTURE OF INVERTER Russian patent published in 2012 - IPC H01L29/72 B82B1/00 

FIELD: electricity.

SUBSTANCE: in the semiconductor structure of the inverter comprising a substrate and semiconductor areas of the first and second type of conductivity, on the substrate there is the first semiconductor area of the second type of conductivity, formed in the form of a nanolayer with height of at least 8 nm, which is the drain of the first transistor of the first type of conductivity, to which the zero potential contact is connected; the second semiconductor area of the first type of conductivity formed in the form of the nanolayer with height of at least 8 nm, which is the source of the second transistor of the second type of conductivity, to which the supply contact is connected. On the first semiconductor area of the second type of conductivity, the first semiconductor area of the first type of conductivity is arranged, which is formed in the form of the nanolayer with height of at least 8 nm, which is the gate area of the first transistor of the first type of conductivity, which has the thin side oxide, where the input signal is sent, on the first semiconductor area of the first type of conductivity there is the second semiconductor area of the second type of conductivity formed in the form of the nanolayer with height of at least 8 nm, which is the source of the first transistor of the first type of conductivity, to which the output contact is connected. On the second semiconductor area of the first type of conductivity there is the third semiconductor area of the second type of conductivity, formed in the form of the nanolayer with height of at least 8 nm, which is the gate area of the second transistor of the second type of conductivity, having the thin side oxide, to which the input signal is sent. On the third semiconductor area of the second type of conductivity there is the third semiconductor area of the first type of conductivity, formed in the form of the nanolayer with height of at least 8 nm, which is the drain of the second transistor of the second type of conductivity, which the input contact is connected, transistors of the first and second type of conductivity are isolated with dielectric areas. The dielectric in the field with dielectric properties is represented by oxides or gases.

EFFECT: development of the semiconductor structure of the nanometre size, having lower capacity of consumption, reduced cost and having higher functionality.

2 cl, 19 dwg