FIELD: metallurgy.
SUBSTANCE: method involves growing a diamond coating by chemical deposition of vapour in UHF plasma at a growth temperature in the deposition chamber whose atmosphere contains 5-30% of methane per unit volume of H2, on the surface of tungsten products with the axial symmetry along the axis of rotation, in the needle holders, so that the rotation body can rotate freely on its axis and move axially with the speed of radial generator displacement in the range of 10-50 mm/h.
EFFECT: improved method.
2 dwg
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