FIELD: electricity.
SUBSTANCE: method of obtainment of nanostructured magnetic material layers on silicon for spintronics involves magnetronic spraying of composite target consisting of 85-99% of silicon and 1-15% of ferromagnetic material, performed in argon medium, with process chamber pressure (6÷7)×10-3 Pa during spraying, argon pressure in magnetron of (6÷7)×10-1 Pa, application rate for heterogenic magnetic material mix of (22÷25) nm/s, plasmachemical etching in fluorine-containing plasma at nitrogen pressure in process chamber of 4÷4.5 Pa, layer etching rate of (10÷12) nm/s, and thermal processing in vacuum at 0.5×10-3 Pa, 300-400°C for 10-15 minutes.
EFFECT: more uniform distribution of components in small-grain layer of nanostructured magnetic film.
2 cl, 3 dwg
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