SYSTEM AND METHOD OF FORMING MAGNETIC RANDOM ACCESS MEMORY Russian patent published in 2012 - IPC H01L43/08 

Abstract RU 2464672 C2

FIELD: physics.

SUBSTANCE: method of levelling a magnetic film during deposition thereof is disclosed. The method involves applying a first magnetic field along a first direction in a region in which a substrate is located when depositing a first magnetic material onto the substrate, wherein the magnetic film contains the first magnetic material, and applying a second magnetic field along a second direction in the region when depositing the first magnetic material onto the substrate. Three versions of apparatus for depositing the magnetic film are also disclosed.

EFFECT: increasing efficiency of magnetic random access memory by cutting power consumption or increasing reliability, with reduction of the size of the elements.

25 cl, 7 dwg

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RU 2 464 672 C2

Authors

Li Sja

Chzhu Sjaochun'

Kang Seung Kh.

Dates

2012-10-20Published

2009-06-23Filed