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2 461 090

(13)

(51)

IPC

H01L21/316(2006-01-01)

(21) (22)

Application

2010152872/28, 2010-12-23

(24)

Start date

2010-12-23

(22)

Actual filing date

2010-12-23

(45)

Published

2012-09-10

(72)

Inventor

Mustafaev Gasan AbakarovichMustafaev Abdulla GasanovichMustafaev Arslan Gasanovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet Im. Kh.M. Berbekova"

METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2012 - IPC H01L21/316

Abstract RU 2461090 C1

FIELD: chemistry.

SUBSTANCE: semiconductor structure is formed by forming oxynitride porous silicon via nitration of plates with porous silicon at temperature 1000°C in a diffusion furnace in an ammonia medium for 1-2 hours, followed by burning at temperature 1200°C in an atmosphere of ammonia at pressure (9-10)·10⁶.

EFFECT: low density of defects, which provides processability, improves parameters, increases reliability and increases percentage yield.

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RU 2 461 090 C1

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Dates

2012-09-10—Published

2010-12-23—Filed