METHOD OF PREPARING SEMICONDUCTOR STRUCTURE Russian patent published in 2010 - IPC H01L21/324 

FIELD: physics; semiconductors.

SUBSTANCE: invention can be used in production of semiconductor devices. In the method of preparing a semiconductor structure on a silicon wafer an n⁺ type layer is formed on which an epitaxial n type layer is grown. Further, in the n⁺ layer, a double layer porous structure with different density is created, the upper layer having pore size from 2 to 8 nm and the lower layer having pore size two orders larger, through successive variation of current density from 30 mA/cm² to 45 mA/cm² with subsequent application of a three-stage oxidation mode: at temperature 300-400°C for one hour in dry oxygen; at temperature 800-900°C for two hours in dry oxygen; at temperature 1000-1100°C for one hour in wet oxygen.

EFFECT: reduced density of defects in semiconductor structures which provides for technological effectiveness, improved parametres, increased reliability and increased percentage yield.

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