METHOD FOR FORMING FIELD-EFFECT TRANSISTORS Russian patent published in 2023 - IPC H01L21/336 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing silicon oxynitride, resistant to defect formation and exposure to hot media. The method for manufacturing field-effect transistors includes the formation of a nitrided oxide layer, active regions of a field-effect transistor and electrodes to them, according to the invention, a nitrided oxide layer is formed - silicon oxynitride by creating a layer of porous silicon 280-300 nm thick, with a porosity of 74% anodic oxidation in an electrochemical cell with 5 weight. % HF, current density 0.5 mA/cm², followed by nitriding of the plates at 1000°C in ammonia for 1 h and oxidation in water vapor at 850°C for 30 min.

EFFECT: invention provides reduction of defectiveness and increase of resistance to hot carriers, maintenance of manufacturability, improvement of device parameters, improvement of quality and increase of yield percentage.

1 cl, 1 tbl