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2 485 630

(13)

(51)

IPC

H01L33/00(2010-01-01)

(21) (22)

Application

2011132814/28, 2011-08-04

(24)

Start date

2011-08-04

(22)

Actual filing date

2011-08-04

(45)

Published

2013-06-20

(72)

Inventor

Danilina Tamara IvanovnaSakharov Jurij VladimirovichTrojan Pavel EfimovichChistoedova Inna Anatol'Evna

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Tomskij Gosudarstvennyj Universitet Sistem Upravlenija I Radioehlektroniki

LED MANUFACTURE METHOD Russian patent published in 2013 - IPC H01L33/00

Abstract RU 2485630 C2

FIELD: electrical engineering.

SUBSTANCE: method for manufacture of a light-emitting semiconductor device based on gallium nitride consists in application of a porous layer of silicon dioxide (SiO₂ ^M) with refraction index less than 1.47 onto the emitting surface.

EFFECT: external quantum yield increase.

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RU 2 485 630 C2

Authors

Danilina Tamara Ivanovna

Sakharov Jurij Vladimirovich

Trojan Pavel Efimovich

Chistoedova Inna Anatol'Evna

Dates

2013-06-20—Published

2011-08-04—Filed