FIELD: process engineering.
SUBSTANCE: invention relates to production of thin-film materials based on systems of double oxides used in evolutive electronic and illumination industries, production of catalyst materials, etc. Proposed method comprises preparing film-forming solution and applying it on article surface, drying, annealing and cooling. Fresh prepared solution is held for 8-13 days at 6-8°C, dried at 60°C for 30-40 minutes with subsequent nonlinear heating to 800-900°C in air. During first 15-20 minutes, heating rate is kept a maximum to make 22°C/min, then, during 17 minutes it is maintained at the level of 18°C/min. Then, during 12 minutes heating rate makes 12°C/min, during last 40-20 minutes it is kept equal to 0.5°C/min and holding at 800-900°C for one hour. Then, gradual cooling in natural chilling of muffle kiln is performed at the following composition of components: tetraethoxysilane, hydrochloric acid, distilled water, metal salt CoCl2·6H2O and ethanol.
EFFECT: new technology.
1 dwg, 2 ex
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Authors
Dates
2012-10-20—Published
2011-05-04—Filed