FIELD: information technology.
SUBSTANCE: bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis which is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
EFFECT: reducing the area of the semiconductor substrate occupied by an STT-MRAM cell.
23 cl, 10 dwg
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