FIELD: information technology.
SUBSTANCE: storage device, having a memory cell which includes a resistance-based memory element connected to an input transistor, wherein the input transistor has a first oxide thickness to enable operation of the memory cell at operating voltage; and a first amplifier configured to apply supply voltage across the memory cell, which is greater than the voltage limit for generating a data signal based on current through the memory cell, wherein the first amplifier includes a transistor clamp having a second oxide thickness which is greater than the first oxide thickness, and wherein the transistor clamp is configured to prevent the operating voltage across the memory cell from exceeding the voltage limit.
EFFECT: improved reading performance of an amplifier for reading MRAM.
20 cl, 4 dwg
