SUBSTRATE HEATING DEVICE FOR SEMICONDUCTOR STRUCTURE MANUFACTURING PLANT Russian patent published in 2012 - IPC H01L21/324 

FIELD: chemistry.

SUBSTANCE: vacuum assembly for producing semiconductor structures is fitted with means of generating molecular flow of the starting semiconductor material and a substrate heating device, having a substrate holder, a heater connected to a power supply by current leads, and a partition with heat-reflecting properties. The substrate heating device is placed in an additional housing placed inside the working vacuum chamber, where the housing of the additional housing is provided with a removable cover which is mounted in such a way that a working window is formed when it is open in order to form a semiconductor structure, wherein the substrate holder is placed between the removable cover and the heater.

EFFECT: high quality of the produced semiconductor structures on large-size substrates owing to uniform heating of the substrate and uniform reduction of the substrate temperature from annealing temperature to the temperature for growing the semiconductor structure, reduced power consumption on heating and annealing substrates.

12 cl, 2 dwg, 1 tbl