METHOD OF CONNECTING MULTILEVEL SEMICONDUCTOR DEVICES Russian patent published in 2017 - IPC H01L21/60 H01L23/52 

FIELD: physics.

SUBSTANCE: method for manufacturing a multilayer semiconductor device includes forming edges on the first and second crystals, forming redistribution layers that extend through at least one of the respective first and second crystals and respective edges, stacking the second crystal on top of the first crystal, drilling one or more via through edges after laying, which interact with the first and second crystals through the edges. The method further comprises the steps of forming a first reconstructed crystal panel comprising a first plurality of crystals formed on a panel frame, the first plurality of crystals including a first crystal and forming a second reconstructed crystal panel comprising a second plurality of crystals formed on the other frame panel. The second set of crystals includes a second crystal, and the crystals from the first and second plurality of crystals are sorted to provide only useable working crystals to form the first and second reconstructed panels, while the periphery of the crystals of the first and second reduced panels surround the periphery of the edge forming step.

EFFECT: improving the characteristics of semiconductor devices.

19 cl, 11 dwg