FIELD: computer engineering.
SUBSTANCE: invention presupposes that fact that memristor material contains a nanosized lithium fluoride layer containing metal nanoclusters, while the nanosized layer is made in the form of a film on a dielectric substrate, and copper is used as material for nanoclusters.
EFFECT: simplified technology of preparing of memristor material and improvement of technical parameters of Roff/Ron>103.
1 cl, 2 dwg
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