METHOD FOR PRODUCTION OF MEMRISTOR WITH NANOCONCENTERS OF ELECTRIC FIELD Russian patent published in 2019 - IPC H01L21/8239 

FIELD: manufacturing technology.

SUBSTANCE: invention can be used for producing memristors with dielectric structure. Essence of the invention lies in the fact that a method is proposed for making the memristor by forming a dielectric structure between two electrodes, comprising a zirconium dioxide layer providing a filarchanical switching mechanism and having a resistive memory, operation of which is stabilized as a result of introduction of electric field to said dielectric structure of nanoconcenters, to combine introduction of electric field nanoconcenters with process of formation of said dielectric structure and amplification in it during resistive switching of oxygen ions flow on surface of one of electrodes made of titanium nitride, successively forming a layer of tantalum oxide and a layer of zirconium dioxide stabilized with yttrium, using magnetron sputtering, wherein when depositing on said tantalum oxide electrode, followed by partial substitution of nitrogen atoms for oxygen atoms, intermediate interface layer of titanium dioxide is formed on surface of said electrode and in areas of said interface layer and deposited layer of tantalum oxide adjacent to surface boundary of their division, nanoconcenters of electric field formed in the form of nanocrystalline inclusions of tantalum are formed.

EFFECT: possibility of optimum combination of improved fabricability of said memristor and stabilization of operation of resistive memory of memristor.

3 cl, 3 dwg