METHOD OF GROWING SILICON-GERMANIUM HETEROSTRUCTURES Russian patent published in 2016 - IPC H01L21/203 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of epitaxy of silicon-germanium heterostructures based on combined sublimation of silicon from surface of silicon source, heated by electric current, and germanium deposition of germane in one vacuum chamber, and can be used for production of semiconductor structures. Method of growing silicon-germanium heterostructures by evaporation of a sublimation plate made from silicon or silicon with dopant and heated as a result of passing electric current through it, and germanium deposition from germane gas medium at low pressure in same vacuum chamber growing is performed in conditions of directed inflow of germane on said sublimation plate in a vacuum chamber and with maintenance of growth rate of layer of silicon-germanium solid solution determined depending on temperature of heating said sublimation plate and heating temperature of substrate, selected from interval of 300-400 °C.

EFFECT: technical effect consists in development of a method, based on silicon sublimation in germane medium, for combined growing of highly-stable low-defect silicon-germanium heterostructures with improved controllability of growing process, at level of creation of mode base for implementation of program-controlled growth process of high-quality heterostructures.

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