MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2022 - IPC H01L27/12 

FIELD: electronic technology.

SUBSTANCE: invention relates to microwave electronic technology and can be used in radar stations with active phased array antennas (APAA) based on the land, sea, in the air and space. A microwave integrated circuit containing a dielectric substrate, on the front and rear sides of which layers of metallization coating are made, passive elements, transmission lines, at least one crystal of the active element, contact pads are located on the front side of the substrate, at least one through hole filled with a highly electrically conductive metal is made in the substrate, with a minimum level of gas emission, the elements of the integrated circuit are made and connected electrically according to its specified topology and electrical circuit, respectively, in this case, the dielectric substrate is made of SiC, the terminals are located on the reverse side of the substrate, the passive elements, transmission lines, the crystal of the active element, the contact pads of the crystal of the active element are located in the central part of the front side of the substrate, and the other contact pads are located on the periphery of the front side of the dielectric substrate and are made in the form of a solid contour, directly on the reverse side the crystal of the active element, the contact pads of the crystal of the active element and other contact pads additionally have a conductive layer, containing tin and gold in a certain ratio, the front side of the active element crystal is connected to its contact pads by means of the aforementioned conductive layer, the microwave integrated circuit is additionally equipped with a base made of a highly electrically conductive material, a recess is made on the front side of the base, the dimensions of which are determined by the dimensions of the passive elements, transmission lines, the active element crystal, contact pads, while a part of the front side of the substrate, with passive elements located on it, transmission lines, the crystal of the active element, the contact pads of the crystal of the active element itself, is located in the recess, the front side of the substrate is connected to the front side of the base by means of a conductive layer on other contact pads, the reverse side of the crystal of the active element is connected to the bottom of the recess by means of its conductive layer.

EFFECT: invention provides an increase in the gain, output power, operating frequency level, reliability, expansion of the scope of application, cost reduction.

7 cl, 4 dwg, 1 tbl