INTEGRATED UHF CIRCUIT Russian patent published in 2020 - IPC H01L27/00 

FIELD: physics.

SUBSTANCE: invention relates to electronic engineering, in particular, for use in radar stations with phased antenna arrays. Integrated microwave circuit, comprising a dielectric substrate from a diamond plate with a thickness of more than 100 mcm, on the front and back side of which a metal coating is made, at that, on the front side - in the form of a local layer, on the front side of the said dielectric substrate there are only passive elements, or - passive and active elements, transmission lines, terminals, wherein elements are electrically connected according to electrical circuit, integrated circuit is grounded, in which metal coating on reverse side of said dielectric substrate is made in form of solid or local layer, between the reverse side of the dielectric substrate and its metal-coated coating in the form of a solid or local layer, respectively, at least one high-electrothermal conductive metal conductor, deepened into the dielectric substrate by its thickness, between high-heat-heat conducting metal conductor and metallized coating there is a layer of dielectric material with thickness of less than 2 mcm, with relative dielectric permeability of more than 4, in dielectric substrate there is at least one through hole filled with high electrothermal duct metal, leads are electrically connected to the high-electrical heat-conducting metal conductor and the integrated circuit is grounded by means of the above through hole, wherein the metallisation coating in the form of a local layer on the front and back sides of the dielectric substrate, a high electrothermal conductive metal conductor, a through hole are made according to a predetermined topology of the microwave integral circuit.

EFFECT: technical result consists in improvement of electrical characteristics, high reliability, reduced weight and size characteristics.

6 cl, 5 dwg