FIELD: electrical engineering.
SUBSTANCE: method for formation of nanosized structures on semiconductors surface for usage in microelectronics includes formation of a monoatomic thickness buffer layer of gold with formation of an orderly 2D underlayer Si(111)-Si(111)-α√3×√3-Au, subsequent precipitation of 1-3 fullerene layers of onto the 2D underlayer Si(111)-Si(111)-α√3×√3-Au to form a fullerite-like lattice and precipitation of a 0.6 - 1 gold monolayer onto the prepared substrate under extra-high vacuum conditions, the substrate temperature being 20°C.
EFFECT: invention enables controllable formation of ultrathin gold nanofilms with the preset electric conductivity value on a semiconductor substrate surface.
2 cl, 3 dwg
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