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2 516 366

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(51)

IPC

C23C14/16(2006-01-01)

B82Y30/00(2011-01-01)

(21) (22)

Application

2012138891/02, 2012-09-10

(24)

Start date

2012-09-10

(22)

Actual filing date

2012-09-10

(45)

Published

2014-05-20

(72)

Inventor

Magkoev Tamerlan TajmurazovichTvauri Inga Vasil'EvnaTsidaeva Natal'Ja Il'InichnaTuriev Anatolij Majramovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet Imeni Kosta Levanovicha Khetagurova"

METHOD OF DEPOSITION OF NANOSCALE FILM ALPHA- AlO (0001) ON METAL SUBSTRATES Russian patent published in 2014 - IPC C23C14/16 B82Y30/00

Abstract RU 2516366 C2

FIELD: nanotechnology.

SUBSTANCE: heating, evaporation and deposition of aluminium oxide on the metal substrate with a particular crystal orientation is carried out. Deposition of vaporised stream consisting of AlO particles and (AlO)₂ is carried out. The vaporised stream consists of AlO particles and (AlO)₂, and after each subsequent monolayer the exposure is carried out in molecular oxygen at a partial pressure of 10^-7mmHg for 3 minutes at a substrate temperature of 700°C.

EFFECT: oriented highly stable nanoscale film is obtained on a clean surface of metal-substrate while maintaining the interphase oxide-metal border at the atomic level.

3 ex

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RU 2 516 366 C2

Authors

Magkoev Tamerlan Tajmurazovich

Tvauri Inga Vasil'Evna

Tsidaeva Natal'Ja Il'Inichna

Turiev Anatolij Majramovich

Dates

2014-05-20—Published

2012-09-10—Filed