SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH POROUS BUFFER LAYER Russian patent published in 2010 - IPC H01L33/12 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor light-emitting diodes based on nitrides of group III metals - aluminium, gallium, indium A^IIIN. The semiconductor light-emitting device which is based on nitrides of group III metals, includes a substrate, as well as series-arranged buffer layer and layers which form a semiconductor heterostructure with a p-n junction, all formed during epitaxial growth. The buffer layer lies directly on the substrate and at least in the zone adjacent to the substrate, has pores formed during epitaxial growth of the buffer layer.

EFFECT: simple structure and technology of making semiconductor light-emitting devices.

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