FIELD: physics, optics.
SUBSTANCE: semiconductor light-emitting device comprises a semiconductor structure, which in its turn comprises a light-emitting layer placed between an area of n-type or an area of p-type; a p-electrode placed on the part of the area of p-type, and the p-electrode comprises the first reflecting material in direct contact with the first part of the area of p-type; the second material in direct contact with the second part of the area of p-type, adjacent to the first part; and the third material, placed above the first and second material, at the same time the third material is made as capable of prevention of migration of the first material, at the same time the first material and the second material represent flat layers of identical thickness. Also according to the invention a method is proposed to manufacture a semiconductor light-emitting device.
EFFECT: invention provides for capability to improve reflecting capacity of a contact, which increases device efficiency.
12 cl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| EXTENSION OF TERMINAL PADS TO EDGE OF CHIP WITH ELECTRICAL INSULATION | 2010 |
|
RU2523777C2 |
| SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH LIGHT OUTPUT STRUCTURES | 2008 |
|
RU2491682C2 |
| NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MAKING SAME | 2012 |
|
RU2586452C2 |
| LIGHT-EMITTING DEVICE HAVING PHOTONIC CRYSTAL AND LUMINESCENT CERAMIC | 2008 |
|
RU2479072C2 |
| LIGHT-EMITTING DEVICE HAVING FILTER (VERSIONS) | 2007 |
|
RU2457580C2 |
| SEMICONDUCTOR LED WITH WAVELENGTH CONVERSION | 2010 |
|
RU2550753C2 |
| LIGHT-EMITTING DEVICE CONTAINING LUMINESCENT CERAMIC AND LIGHT-DIFFUSING MATERIAL (VERSIONS) | 2007 |
|
RU2457582C2 |
| SUBSTRATE REMOVAL DURING LIGHT-EMITTING DIODE FORMATION | 2008 |
|
RU2466480C2 |
| BORON-CONTAINING III-NITRIDE LIGHT-EMITTING DEVICE | 2010 |
|
RU2523747C2 |
| SEMICONDUCTOR LIGHT-EMITTING DEVICES GROWN ON COMPOSITE WAFERS | 2009 |
|
RU2515205C2 |
