METHOD OF MAKING PHOTODIODE Russian patent published in 2015 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making a photodetector array according to the invention includes forming, on a semiconductor plate, a p+-n- or n+-p-junction on the entire surface; forming a protective photoresist mask with a drawing of a photosensitive element, followed by etching mesa-structures at a depth where the p+-n- or n+-p-junction emerges onto the surface at the base of the mesa-structure at an angle less than 60°. Further, the method includes applying a protective dielectric material; forming a photoresist mask, followed by etching contact windows in the dielectric material; sputtering a metal; forming a photoresist mask, followed by etching the metal to obtain a contact system; sputtering indium; forming a photoresist mask, followed by etching the indium with one of the known methods: chemical etching or ion etching, followed by removing photoresist layers to obtain indium microcontacts.

EFFECT: making mesa-structures using known ion and chemical etching methods, which ensure low electric field intensity on the surface, and therefore low dark current values of photodetectors.

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