METHOD FOR INTEROPERATION PRESERVATION OF GALLIUM ARSENIDE PLATES Russian patent published in 1996 - IPC

FIELD: semiconductor engineering; manufacture of semiconductor devices. SUBSTANCE: gallium arsenide plates are cleaned of carbon- containing dirt and treated with concentrated hydrogen peroxide for at least 3 min. Then half of all plates are rinsed, dried out, and additionally treated with concentrated aqueous solution of ammonia for at least 3 min. After that, they are dried out in inert gas stream and maximum in 12 min working surfaces of each pair of plates treated with concentrated hydrogen peroxide and with concentrated aqueous solution of ammonia are brought in contact. In the process, centers of plates are aligned. Preservation effective period, when using this method, is increased to 30 days. EFFECT: improved preservation period of carbon-containing dirt level. 1 tbl