METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/336 

FIELD: electronic equipment.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of field-effect transistors with low leakage currents. Method of making semiconductor device under dielectric under-gate thin layer of 8-10 nm Si₃N₄ created by nitrogen ion implantation with energy of 2.1 keV, by dose of 8*10¹⁷ cm^-2 into substrate for two minutes, followed by annealing at temperature of 300-400 °C for 15-30 s.

EFFECT: invention increases percentage yield of serviceable devices, improving their quality and reliability.

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