METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: technology of the method consists in the following: a thin layer of oxide is grown on a silicon substrate of p-type conductivity with a resistivity of 10 ohms cm, with orientation (111), for the gate structure of the devices. Over the oxide, a layer of polycrystalline silicon is formed above the source, gate and drain regions with a thickness of 45 nm at a silane flow of 10 cm³/min and hydrogen of 21 l/min and an argon flow rate of 2.7 cm/s with a growth rate of 1.5 nm/s at a temperature of 850-900 °C, followed by the introduction of nitrogen ions with an energy of 10-15 keV, a dose of 1⋅10¹⁷ cm^-2 at a substrate temperature of 80-90 °C and carrying out of heat treatment at a temperature of 300-400 °C for 15-30 seconds in an atmosphere of hydrogen. Next, semiconductor devices are formed using the standard technology.

EFFECT: reducing the loss current, improved fabricability, instrument parameters and quality, increasing the percentage yield of serviceable devices.

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