METHOD OF SEMICONDUCTOR DEVICE MANUFACTURING Russian patent published in 2017 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: in the method of semiconductor device manufacturing after the formation of a gate silica on a p-type silicon wafer with orientation (111), the structures are implanted with singly charged oxygen ions with an energy of 45-50 keV, a dose of 3*10¹²-3*10¹³ cm^-2, followed by thermal annealing at a temperature of 650-700°C for 4-6 hours, under a nitrogen atmosphere. Next, drain, source and gate electrodes are formed using standard technology. As a result of the reaction between excess silicon and embedded oxygen, heat treatment in a nitrogen atmosphere results in a decrease in the fixed positive charge at the silicon-silicon dioxide dividing surface and in the reduction of leakage currents.

EFFECT: reduced loss current, improved fabricability, instrument parameters and quality, increased percentage yield of serviceable devices.

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