METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH LOW-DOPED DRAINS Russian patent published in 2024 - IPC H01L21/265 

FIELD: semiconductor devices.

SUBSTANCE: invention can be used for making semiconductor devices. Method of manufacturing a semiconductor device with lightly doped drains involves successive formation of high-doped source-drain p⁺-regions by implantation of boron ions B⁺ with energy of 30 keV with dopant concentration of (1–2)⋅10²⁰ cm⁻³ and lightly doped source-drain p^--areas by implantation of boron ions B⁺ with energy of 10 keV with dose of 10¹³ cm⁻², followed by fast thermal annealing at temperature of 1050 °C for 5 s in a nitrogen atmosphere.

EFFECT: providing the possibility of increasing the percentage of serviceable devices and improving their reliability.

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