SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/266 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor manufacturing technology, in particular to the technology of manufacturing a field effect transistor with a reduced defect density. In the method of making a semiconductor device on a GaAs substrate, a layer of aluminum nitride AIN with thickness of 55 nm is formed, followed by implantation of silicon ions with energy 60 keV, dose (3–5)*10¹² cm^-2. Temperature during implantation does not exceed 50 °C. Obtained structures are annealed at temperature 850 °C for 15 minutes in inert medium. Further, active regions of the field-effect transistor and electrodes thereto are formed according to standard technology.

EFFECT: invention provides reduced density of defects, improved manufacturability, improved parameters of instruments, high quality and yield.

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