METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L21/265 

FIELD: instrument making.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of field-effect transistors with high stability of parameters. Disclosed is a method of making semiconductor device, which includes processes of creation of active areas of device and gate dielectric. According to invention, after forming gate dielectric, method includes successively doping oxide with boron ions with energy oxide 55 keV, a dose of 3⋅10¹³ cm^-2 and fluorine ions with energy 55 keV, dose 1⋅10¹³ cm^-2 with subsequent annealing at 900 °C for 15 min in a nitrogen medium.

EFFECT: invention provides higher stability, low density of defects, manufacturability, improved parameters, high reliability and percentage yield of non-defective devices.

1 cl, 1 tbl