SUPERCONDUCTING TUNNEL DIODE Russian patent published in 1995 - IPC

Abstract SU 1575858 A1

FIELD: electronic devices. SUBSTANCE: semiconductor layer between superconducting electrodes contain quantum heterogeneous structure with multiple layers. This structure has at least two semiconductor materials which differ in width of prohibited zone. Layer of material with narrow zone is positioned between layers of materials with wider zone. This provides quantum pit for basic charge carriers. EFFECT: increased maximal operating frequency and increased dynamic range. 4 dwg

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SU 1 575 858 A1

Authors

Tager A.S.

Belousov P.S.

Gusel'Nikov N.A.

Snegirev V.P.

Dates

1995-09-20—Published

1988-10-10—Filed