FIELD: chemistry.
SUBSTANCE: invention relates to vacuum-plasma technology, namely to sources of metal atoms, mainly for precipitation of thin metal films in dielectric substrates in vacuum chamber, and to sources of fast atoms and molecules of gas. Installation contains vacuum chamber 1, emission grid from precipitated metal 2, hollow cathode 3, anode 4, source of discharge power supply 5, source of accelerating voltage 6, target 7 from foil of precipitated metal, which covers internal surface of cathode 3, holder 8 of substrates, covered from inside with screen 9 from foil of precipitated metal, and source of bias voltage 10, which makes it possible in case of constant flows of metal atoms and fast gas atoms to regulate the energy of the latter from zero to 1000 eV.
EFFECT: reduction of precipitated metal loss and increase of precipitated film homogeneity.
4 cl, 4 dwg
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