FAST ATOM SOURCE FOR UNIFORM ETCHING OF FLAT DIELECTRIC SUBSTRATES Russian patent published in 2024 - IPC H01J27/04 H01J37/34 H05H3/00 C23C14/35 

FIELD: various technological processes.

SUBSTANCE: invention relates to treatment of articles with accelerated ions or fast atoms and is intended to produce articles with improved characteristics due to removal of a defective surface layer with a beam of fast atoms. Source of fast atoms for uniform etching of flat dielectric substrates comprises a gas-discharge chamber, a cylindrical hollow cathode inside the chamber, an anode inside the hollow cathode and a circular concave grid overlapping the outlet hole of the hollow cathode. Opposite the grid there is a screen passing through its focal point, with an opening in the area of the focal point. Solenoid is installed outside the gas-discharge chamber to create an axial magnetic field inside the hollow cathode.

EFFECT: increased reliability and service life of a beam of fast argon atoms at uniform etching of flat dielectric substrates due to reduction of dielectric contaminations on electrodes of the source.

1 cl, 1 dwg